Infineon Technologies SPD50P03L
OptiMOS-P Power - Transistor
| Part No. | SPD50P03L |
|---|---|
| Datasheet | SPD50P03L Download |
| Manufacturer |  Infineon Technologies |
| Description | OptiMOS-P Power - Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value -50 -50 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -200 256 -6 ±20 150 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-50 A , VDD =-25V, RGS=25Ω Reverse diode dv/dt IS =-50A, VDS =-24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-12-06 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint, t < 10s @ 6 cm 2 cooling area 1) SPD50P03L Symbol min. RthJC RthJA - Values typ. max. 1 75 50 Unit K/WELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -30 -1 Va...
