SPI12N50C3 Datasheet PDF

MAXIMUM RATINGS

Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) Symbol ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 11.6 7 34.8 340 11.61) 71) 34.8 340 0.6 0.6 11.6 11.6 ±20 ±20 ±30 ±30 125 33 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 3.1 Page 1 2009-11-30 SPP12N50C3 SPI12N50C3, SPA12N50C3

MAXIMUM RATINGS

Parameter Drain Source voltage slope VDS = 400 V, ID = 11.6 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient,...