Infineon Technologies SPI20N60CFD
Power Transistor
| Part No. | SPI20N60CFD |
|---|---|
| Datasheet | SPI20N60CFD Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Package PG-TO262 Pb-free Yes Marking 20N60CFD Symbol ID Value 20.7 13.1 52 690 1 20 40 ±20 ±30 208 -55... +150 Unit A Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax ID puls EAS Avalanche energy, single pulse ID = 10 A, V DD = 50 V mJ Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 20 A, V DD = 50 V Avalanche current, repetitive t AR limited by T jmax Reverse diode d v/dt IS=20.7A, V DS=480V, T j=125°C IAR dv/dt VGS VGS Ptot Tj , Tstg A V/ns V W °C 2007-02-01 Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C Operating and storage temperature Rev. 2.5 Page 1 SPI20N60CFDMAXIMUM RATINGS
Parameter Drain Source voltage slope V DS = 480 V, ID = 20.7 A, Tj = 125 °C Symbol dv/dt di F/dt Value 80 900 Unit V/ns A/µs Maximum diode commutation speed V DS = 480 V, ID = 20.7 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, ju...
