Infineon Technologies SPI80N06S-08
OptiMOS Power-Transistor
| Part No. | SPI80N06S-08 |
|---|---|
| Datasheet | SPI80N06S-08 Download |
| Manufacturer |  Infineon Technologies |
| Description | OptiMOS Power-Transistor |
| Buy | Stock & Price |
FEATURES
● N-channel - Enhancement mode● Automotive AEC Q101 qualified
● MSL1 up to 260°C peak reflow
● 175°C operating temperature
● Avalanche test
● Repetive Avalanche up to Tjmax = 175 °C
● dv /dt rated Type SPB80N06S-08 SPI80N06S-08 SPP80N06S-08 Package P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Ordering Code P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 Ω Marking Q67060-S6185 1N0608 T C=25 °C, V GS=10 V Q67060-S6187 1N0608 T C=100 °C, V GS=10 V Q67060-S6186 1N0608 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T C=25 °C, V GS=10 V Value Unit A 80 T C=100 °C, V GS=10 V Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, periodic2) Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 page 1 2) 80 320 700 30 6 ±20 kV/µs V W °C mJ I D,pulse E AS E AR dv /dt V GS P tot T j, T stg T C=25 °C I D=8...
