Infineon Technologies SPP02N80C3
Cool MOS Power Transistor
MAXIMUM RATINGS
Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol SPP ID 2 1.2 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 6 90 0.05 2 ±20 ±30 42 Value SPA Unit A 21) 1.21) 6 90 0.05 2 ±20 ±30 30.5 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=1A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=2A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Page 1 2003-10-14 Final dataMAXIMUM RATINGS
Parameter Drain Source voltage slope V DS = 640 V, I D = 2 A, Tj = 125 °C SPP02N80C3 SPA02N80C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10sELECTRICAL CHARACTERISTICS
, at T j=25°C unless otherwise specified Symbol Conditions Parameter min.