Infineon Technologies SPP06N80C2
Cool MOS Power Transistor
| Part No. | SPP06N80C2 |
|---|---|
| Datasheet | SPP06N80C2 Download |
| Manufacturer |  Infineon Technologies |
| Description | Cool MOS Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol Value 6 3.8 18 230 0.2 6 6 ±20 83 -55... +150 Unit A ID Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse ID=1.5A, V DD=50V ID puls EAS EAR IAR dv/dt mJ Avalanche energy, repetitive t AR limited by Tjmax1) ID=6A, V DD=50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS=6A, VDS < VDD, di/dt=100A/µs, T jmax=150°C A V/ns V W °C Gate source voltage Power dissipation TC = 25 °C VGS Ptot Tj , Tstg Page 1 Operating and storage temperature 2000-05-29 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10sELECTRICAL CHARACTERISTICS
, at T j = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V GS=0V, ID=0.25mA SPP06N80C2 Symbol min.
