Infineon Technologies SPP07N60CFD
Power-Transistor
| Part No. | SPP07N60CFD |
|---|---|
| Datasheet | SPP07N60CFD Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Intrinsic fast-recovery body diode● Extremely low reverse recovery charge
● Ultra low gate charge Product Summary V DS @Tjmax R DS(on),max ID
● Extreme dv /dt rated
● High peak current capability
● Qualified for industrial grade applications according to JEDEC1) 650 V 0.7 " 6.6 A PG-TO220 CoolMOS CFD designed for:
● Soft switching PWM Stages
● LCD & CRT TV Type SPP07N60CFD Package PG-TO220 Marking 07N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive2),3) Avalanche current, repetitive2),3) Drain source voltage slope Symbol Conditions ID I D,pulse E AS E AR I AR T C=25 °C T C=100 °C T C=25 °C I D=3.3 A, V DD=50 V I D=6.6 A, V DD=50 V dv /dt I D=6.6 A, V DS=480 V, T j=125°C Reverse diode dv /dt dv /dt Maximum diode commutation speed di /dt I S=6.6 A, V DS=480 V, T j=125 °C Gate source voltage V GS static AC (f >1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Mounting torque M3 & M3.5 screws Rev.
