Infineon Technologies SPP07N60S5
Power Transistor
| Part No. | SPP07N60S5 |
|---|---|
| Datasheet | SPP07N60S5 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = - A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature IAR VGS VGS Ptot Tj , Tstg Value 7.3 4.6 14.6 230 0.5 7.3 ±20 ±30 83 -55... +150 Unit A mJ A V W °C Rev. 2.7 Page 1 2009-11-27 SPP07N60S5 SPI07N60S5MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Symbol RthJC RthJA RthJA Tsold Val...
