Infineon Technologies SPP07N65C3
Cool MOS Power Transistor
| Part No. | SPP07N65C3 |
|---|---|
| Datasheet | SPP07N65C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Cool MOS Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=1.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=2.5A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg Value SPP_I SPA 7.3 7.31) 4.6 4.61) 21.9 21.9 230 230 0.5 0.5 2.5 2.5 ±20 ±20 ±30 ±30 83 32 -55...+150 Unit A A mJ A V W °C Rev. 1.92 Page 1 2010-12-21 SPP07N65C3, SPI07N65C3 SPA07N65C3MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @...
