Infineon Technologies SPP08N50C3
Cool MOS Power Transistor
| Part No. | SPP08N50C3 |
|---|---|
| Datasheet | SPP08N50C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Cool MOS Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Rev. 2.91 Page 1 Value Unit SPP_I SPA A 7.6 7.61) 4.6 4.61) 22.8 22.8 A 230 230 mJ 0.5 0.5 7.6 7.6 ±20 ±20 ±30 ±30 83 32 -55...+150 15 A V W °C V/ns 2009-11-27 SPP08N50C3, SPI08N50C3 SPA08N50C3MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 400 V, ID = 7.6 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, wa...
