Infineon Technologies SPP08P06PH
Power-Transistor
| Part No. | SPP08P06PH |
|---|---|
| Datasheet | SPP08P06PH Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
Product Summary● P-Channel
● Enhancement mode
● Avalanche rated
● dv/dt rated Drain source voltage VDS -60 V Drain-source on-state resistance RDS(on) 0.3 W Continuous drain current ID -8.8 A
● 175°C operating temperature
● Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPP08P06P H Package PG-TO220-3 Pin 1 PIN 2/4 PIN 3 GDS
MAXIMUM RATINGS
,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current TC = 25 °C ID puls Avalanche energy, single pulse ID = -8.8 A , VDD = -25 V, RGS = 25 W EAS Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR dv/dt IS = -8.8 A, VDS = -48 , di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj , Tstg Value -8.8 -6.2 -35.2 70 4.2 6 ±20 42 -55...+175 55/175/56 Unit A mJ kV/µs V W °C Rev...
