Infineon Technologies SPP11N60C3
Power Transistor
| Part No. | SPP11N60C3 |
|---|---|
| Datasheet | SPP11N60C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Value SPP_I SPA Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt 11 111) 7 71) 33 33 340 340 0.6 0.6 11 11 ±20 ±20 ±30 ±30 125 33 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 3.3 Page 1 2018-02-09 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, d...
