Infineon Technologies SPP21N50C3
Power Transistor
| Part No. | SPP21N50C3 |
|---|---|
| Datasheet | SPP21N50C3 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol SPP_I ID 21 13.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt page 1 Value SPA Unit A 211) 13.11) 63 690 1 21 ±20 ±30 34.5 15 W °C V/ns 2009-12-22 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=10A, VDD=50V 63 690 1 21 ±20 ±30 208 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=21A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt Rev. 3.2 7) A V -55...+150 SPP21N50C3 SPI21N50C3, SPA21N50C3MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 400 V, ID = 21 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD...
