Infineon Technologies SPP24N60C3
Power Transistor
MAXIMUM RATINGS
Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 24.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage static VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Ptot Operating and storage temperature Reverse diode dv/dt 4) Tj , Tstg dv/dt Value 24.3 15.4 72.9 780 1 24.3 ±20 ±30 240 -55... +150 15 Unit A mJ A V W °C V/ns Rev. 2.5 Page 1 2009-12-01 SPP24N60C3MAXIMUM RATINGS
Parameter Drain Source voltage slope VDS = 480 , ID = 24.3 , Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Symbol RthJC RthJA Tsold Values Unit min. typ. max. - - 0.52 K/W - - 62 - - 260 °CELECTRICAL CHARACTERISTICS
, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max.