Infineon Technologies SPP24N60CFD
Power Transistor
| Part No. | SPP24N60CFD |
|---|---|
| Datasheet | SPP24N60CFD Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● Intrinsic fast-recovery body diode● Extremely low reverse recovery charge
● Ultra low gate charge Product Summary V DS @ Tjmax R DS(on),max ID
● Extreme dv /dt rated
● High peak current capability
● Qualified for industrial grade applications according to JEDEC1) 650 V 0.185 " 21.7 A PG-TO220
● CoolMOS CFD designed for
● Softswitching PWM Stages
● LCD & CRT TV Type SPP24N60CFD Package TPOG-2T2O0220 Marking 24N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive2),3) Avalanche current, repetitive2),3) ID I D,pulse E AS E AR I AR T C=25 °C T C=100 °C T C=25 °C I D=10A, V DD=50 V I D=20A, V DD=50 V Drain source voltage slope dv /dt I D=21.7A, V DS=480V, T j=125°C Reverse diode dv /dt dv /dt Maximum diode commutation speed di /dt I S=21.7A, V DS=480 V, T j=125°C Gate source voltage V GS static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M3 & M3.5 screws Value 21.7 13.7 55 780 1 20 80 40 600 ±20 ±30 240 -55 ...
