SPU01N60C3
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
650 6 0.8
V Ω A
P-TO251-3-1
Type SPU01N60C3 SPD01N60C3
Package P-TO251-3-1 P-TO252
Ordering Code Q67040-S4193 Q67040-S4188
Marking 01N60C3 01N60C3
Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive t AR limited by Tjmax1) EAR I D = 0.8 A, VDD = 50 V Avalanche current, repetitive t AR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz)
Power dissipation, T C = 25°C
Symbol ID
Value 0.8 0.5
Unit A
I D puls EAS
1.6 20 0.01 0.8 ±20 ±30 11 -55... +150 W °C A V m J
VGS Ptot T j , T stg
Operating and storage temperature
Page 1
2004-03-01
Rev. 2.0 Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, I...
