Datasheet4U Logo Datasheet4U.com

SPU01N60C3 - Cool MOS Power Transistor

Datasheet Summary

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

📥 Download Datasheet

Datasheet preview – SPU01N60C3

Datasheet Details

Part number SPU01N60C3
Manufacturer Infineon
File Size 279.90 KB
Description Cool MOS Power Transistor
Datasheet download datasheet SPU01N60C3 Datasheet
Additional preview pages of the SPU01N60C3 datasheet.

📁 Similar Datasheet

  • SPU01N60C3 - N-Channel MOSFET (INCHANGE)
  • SPU02N60 - SIPMO Power Transistor (Siemens Semiconductor)
  • SPU02N60C3 - Cool MOS Power Transistor (Infineon Technologies)
  • SPU02N60C3 - N-Channel MOSFET (INCHANGE)
  • SPU02N60S5 - Power Transistor (Infineon Technologies)
  • SPU02N60S5 - N-Channel MOSFET (INCHANGE)
  • SPU03N60C3 - Cool MOS Power Transistor (Infineon Technologies)
  • SPU03N60C3 - N-Channel MOSFET (INCHANGE)
  • SPU03N60S5 - Cool MOS Power Transistor (Infineon Technologies)
  • SPU03N60S5 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
Rev. 2.0 SPU01N60C3 SPD01N60C3 VDS @ Tjmax RDS(on) ID P-TO252 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 650 6 0.8 V Ω A P-TO251-3-1 Type SPU01N60C3 SPD01N60C3 Package P-TO251-3-1 P-TO252 Ordering Code Q67040-S4193 Q67040-S4188 Marking 01N60C3 01N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 0.
Published: |