SPU04N60C2
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved noise immunity
P-TO251
Product Summary VDS RDS(on) ID 600 0.95 4.5
P-TO252
V Ω A
Type SPD04N60C2 SPU04N60C2
Package P-TO252 P-TO251
Ordering Code Q67040-S4307 Q67040-S4306
Marking 04N60C2 04N60C2
Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID
Value 4.5 2.8
Unit A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =3.6A, VDD =50V
ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg
9 130 0.4 4.5 6 ±20 50 -55... +150 A V/ns V W °C m J
Avalanche energy, repetitive t AR limited by Tjmax 1)
ID =4.5A, VDD =50V
Avalanche current, repetitive t AR limited by Tjmax Reverse diode dv/dt
IS =4.5A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C
Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature
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