Infineon Technologies SPU08P06P
SIPMOS Power-Transistor
| Part No. | SPU08P06P |
|---|---|
| Datasheet | SPU08P06P Download |
| Manufacturer |  Infineon Technologies |
| Description | SIPMOS Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W●
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● A Type SPD08P06P SPU08P06P Package P-TO252 Ordering Code Q67040-S4153 Pin 1 G PIN 2/4 D PIN 3 S P-TO251-3-1 Q67040-S4154
MAXIMUM RATINGS
,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -8.8 -6.2 Unit A ID T C = 25 °C T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -35.2 70 4.2 6 kV/µs mJ T C = 25 °C Avalanche energy, single pulse I D = -8.8 A , VDD = -25 V, R GS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -8.8 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 42 -55...+175 55/175/56 V W °C T C = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 1999-11-22 Preliminary data Thermal Charac...
