Infineon Technologies SPU09N05
SIPMOS PowerTransistor
| Part No. | SPU09N05 |
|---|---|
| Datasheet | SPU09N05 Download |
| Manufacturer |  Infineon Technologies |
| Description | SIPMOS PowerTransistor |
| Buy | Stock & Price |
FEATURES
● N channel● Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated
● Avalanche rated
● dv/dt
● 175˚C operating temperature Type SPD09N05 SPU09N05 Package P-TO252 P-TO251 Ordering Code Q67040-S4136 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4130-A2 Tube MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current Value 9.2 6.5 37 35 2.4 6 ±20 24 -55... +175 55/175/56 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 9.2 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs V W ˚C IS = 9.2 A, VDS = 40 V, di/dt = 200 A/µs Gate source voltage Power dissipation VGS Ptot Tj , Tstg TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 06.99 SPD 09N05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Symbol min.
