Infineon Technologies SPU30N03
SIPMOS Power Transistor
| Part No. | SPU30N03 |
|---|---|
| Datasheet | SPU30N03 Download |
| Manufacturer |  Infineon Technologies |
| Description | SIPMOS Power Transistor |
| Buy | Stock & Price |
FEATURES
● N channel● SPD 30N03 30 30 V A Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID Enhancement mode RDS(on) 0.015 Ω
● Avalanche rated
● dv/dt rated
● 175˚C operating temperature Type SPD30N03 SPU30N03 Package P-TO252 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4144-A2 Tape and Reel P-TO251-3-1 Q67040-S4146-A2 Tube
MAXIMUM RATINGS
, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 30 120 250 12 6 kV/µs mJ Unit A ID TC = 25 ˚C, TC = 100 ˚C 1) Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse ID = 30 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 120 -55... +175 55/175/56 V W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 SPD...
