Infineon Technologies SPW17N80C2
Power Transistor
| Part No. | SPW17N80C2 |
|---|---|
| Datasheet | SPW17N80C2 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol Value 17 11 51 670 0.5 17 6 ±20 208 -55... +150 Unit A ID Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse ID=4A, V DD=50V ID puls EAS EAR IAR dv/dt mJ Avalanche energy, repetitive t AR limited by Tjmax1) ID=17A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax w w . u Gate source voltage 4 t e Power dissipation e h s a and storage temperature Operating t a d . w TC = 25 °C Reverse diode dv/dt IS=17A, V DS < V DD, di/dt=100A/µs, T jmax=150°C m o c A V/ns V W °C VGS Ptot Tj , Tstg Page 1 2000-05-29 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Symbol min. SPW17N80C2 Values typ. max. 0.6 62 Unit RthJC RthJA - K/W Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s - - 1.67 260 W/K °C T sold - Elect...
