SPW35N60CFD Datasheet PDF

FEATURES

TM Power Transistor Product Summary V DS R DS(on),max ID 600 V
● New revolutionary high voltage technology
● Intrinsic fast-recovery body diode
● Extremely low reverse recovery charge
● Ultra low gate charge
● Extreme dv /dt rated
● High peak current capability
● Periodic avalanche rated
● Qualified according to JEDEC1) for target applications
● Pb-free lead plating; RoHS compliant 0.118 Ω 34 A PG-TO247 Type SPW35N60CFD Package PG-TO247 Ordering Code Q67045A5053 Marking 35N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) Drain source voltage slope Reverse diode d v /dt Maximum diode commutation speed Gate source voltage I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=34.1 A, V DS=480 V, T j=125 °C I S=34.1 A, V DS=480 V, T j=125 °C static AC (f >1 H...