Infineon Technologies SPW47N60CFD
CoolMOS Power Transistor
FEATURES
TM Power Transistor Product Summary V DS R DS(on),max ID 600 V● New revolutionary high voltage technology
● Intrinsic fast-recovery body diode
● Extremely low reverse recovery charge
● Ultra low gate charge
● Extreme dv /dt rated 0.083 Ω 46 A PG-TO247
● High peak current capability
● Periodic avalanche rated
● Qualified according to JEDEC1) for target applications
● Pb-free lead plating; RoHS compliant Type SPW47N60CFD Package PG-TO247 Ordering Code Q67045A5051 Marking 47N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) Drain source voltage slope Reverse diode d v /dt Maximum diode commutation speed Gate source voltage I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=46 A, V DS=480 V, T j=125 °C I S=46 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) P...