Infineon Technologies T458BPA
This 4 stage GaAs MMIC power amplifier is intended for use in radio link applications. It provides an output power of 23 dBm at 1 dB gain compression.DESCRIPTION
: The device is fabricated with a 0.18 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology. 7\SH Chip T458B 2UGHULQJ &RGH tbd 3DFNDJH ChipELECTRICAL SPECIFICATIONS
: (VD = 5 – 6 V, ID = 300 mA) Parameter Frequency Range P-1dB Gain Psat PAE Input Return Loss (incl. bond wire) Output Return Loss (incl. bond wire) Min 17 Typ Max 24 Unit GHz dBm dB dBm % dB dB 23 22 24 15 -6 -3 Infineon Technologies AG i. Gr. pg. 1/4 Preliminary data sheet 07.05.99 This is information on a product that is under development. Data and specificatios are subject to change without notice. T458B_PA 0HDVXUHG GDWD (on chip measurements) 30 CCH250PW.SPW Saturated Output Power Pout (dBm) 28 26 24 22 20 18 12 14 16 18 20 22 24 26 28 30 Frequency f (GHz) $SSOLFDWLRQ &LUFXLW tbd. Infineon Technologies AG i. Gr. pg. 2/4 Preliminary data sheet 07.05.99 This is information on a product that is under development. Data and specificatios are subject to change without notice.