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BCM856S Description

PNP Silicon AF Transistor Array Precision matched transistor pair: ∆IC ≤ 10% For current mirror applications Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors plementary type: 150 Unit V mA mW °C 1 2011-10-05 BCM856S Parameter Junction - soldering point1) Symb.