IPD90N04S3-H4 Description
OptiMOS®-T Power-Transistor.
IPD90N04S3-H4 Key Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (RoHS pliant)
- 100% Avalanche tested
- Gate source voltage
- Power dissipation
- IEC climatic category; DIN IEC 68-1