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BFP183R Description

BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Unit 2 Aug-09-2001 BFP183R at TA = 25°C, unless otherwise specified.