• Part: ITBH09150B2E
  • Description: High Power RF LDMOS FET
  • Manufacturer: Innogration
  • Size: 1.02 MB
ITBH09150B2E Datasheet (PDF) Download
Innogration
ITBH09150B2E

Description

The ITBH09150B is a 150-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drift Table
  • Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Rang