ITBH09200B2E
Description
The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Excellent thermal stability, low HCI drift
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table
- Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table
- Thermal Characteristics Characteristic Thermal Resistance, Junction to Case TC= 85°C, TJ=200°C, DC test Table
- ESD Protection Characteristics Test Methodology Symbol VDSS VGS VDD Tstg TC TJ Symbol RJC Value 75 -10 to +10 +32 -65 to +150 +150 +225 Value Class Unit Vdc Vdc Vdc °C °C °C Unit °C/W 1/7 Innogration (Suzhou) Co., Ltd. Document Number: ITBH09200B Product Datasheet V2.0 Human Body Model (per JESD22--A114) Class 2 Table
- Electrical Characteristics Characteristic Symbol Min Typ Max Unit DC Characteristics Drain-Source Breakdown Voltage (VGS=0V; ID=100uA) VDSS 75 V Zero Gate Voltage Drain Leakage Current IDSS (VDS = 28 V, VGS = 0 V) 1 A Gate--Source Leakage Current (VGS = 6 V, VDS = 0 V) IGSS 1 A Gate Threshold Voltage (VDS = 28V, ID = 1 mA) VGS(th)
