ITBH09200B2E Description
The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09200B2 Typical Single-Carrier W-CDMA Performance:.
ITBH09200B2E Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Excellent thermal stability, low HCI drift
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- pliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
- 10 to +10 +32
- 65 to +150 +150 +225