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ITBH09260B2E

Manufacturer: Innogration

ITBH09260B2E datasheet by Innogration.

This datasheet includes multiple variants, all published together in a single manufacturer document.

ITBH09260B2E datasheet preview

ITBH09260B2E Datasheet Details

Part number ITBH09260B2E
Datasheet ITBH09260B2E ITBH09260B2 Datasheet (PDF)
File Size 791.68 KB
Manufacturer Innogration
Description High Power RF LDMOS FET
ITBH09260B2E page 2 ITBH09260B2E page 3

ITBH09260B2E Overview

The ITBH09260B is a 260-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09260B2 Typical Performance (On Innogration fixture with device soldered):.

ITBH09260B2E Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drift
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