ITBH09260B2E - High Power RF LDMOS FET

This page provides the datasheet information for the ITBH09260B2E, a member of the ITBH09260B2 High Power RF LDMOS FET family.

Product Overview

Innogration

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Datasheet Details

Part number	ITBH09260B2E
Manufacturer	Innogration
File Size	791.68 KB
Description	High Power RF LDMOS FET
Datasheet	ITBH09260B2E Datasheet
Additional preview pages of the ITBH09260B2E datasheet.

ITBH09260B2E Product details

Description

The ITBH09260B is a 260-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typical Perf

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case O.

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Published: Aug 5, 2018 |