ITCH09080GX - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITCH09080GX
Manufacturer	Innogration
File Size	547.48 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH09080GX Datasheet
Additional preview pages of the ITCH09080GX datasheet.

Product details

Description

The ITCH09080GX is a 80-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies from HF to 1500MHz. Typical Class AB Performance (On Innogration fixture with device soldered): VDD = 28 Volts,Vgs=3.02V, IDQ = 450 mA, Pulse CW, Pulse Width =20us, Duty Cycle =10%.Frequency Gain (dB) P-1dB (W) D@P-1 (%) P

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage.

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Published: Aug 5, 2018 |