Innogration ITCH24025E2
The ITCH24025E2 is a 30-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 2700 MHz ITCH24025E2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 200 mA , Pulse Width =10us, Duty Cycle =12%.| Part No. | ITCH24025E2 |
|---|---|
| Datasheet | ITCH24025E2 Download |
| Manufacturer |  Innogration |
| Description | RF Power LDMOS FET |
| Buy | Stock & Price |
DESCRIPTION
The ITCH24025E2 is a 30-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 2700 MHz ITCH24025E2● Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 200 mA , Pulse Width =10us, Duty Cycle =12%. Frequency P_1dB ηD P_3dB ηD Gp (dB) (MHz) (dBm) (%) (dBm) (%) 850~900 22 45 64 46 67 1330~1350 18 47 61 47.6 65 1805~1880 19 46 59 47 61 2400~2500 20 44 55 45 57 2620~2690 18.5 45 53 46 57
● Typical Performance (On Innogration fixture with device soldered): VDD = 32 Volts, IDQ = 350 mA, Test signal: WCDMA, 3GPP test model 1; 1 to 64 DPCH; Channel Bandwidth=3.84MHz,PAR =10.5 dB at 0.01 % probability on CCDF. Frequency (MHz) PL(AV) (W) Gp (dB) ηD ACPR5M ACPR10M (%) (dBc) (dBc) 2110 3 17.3 16 -46.7 -57.7 2140 3 17.6 16 -46.5 -57.6 2170 3 18 16 -46.4 -57.6 Highlight: The fixture is used same board different BOM.
FEATURES
● High Efficiency and Linear Gain Operations● Integrated...
