ITDE10700D4 - High Power RF LDMOS FET

Datasheet Summary

Description

The ITDE10700D4 is a 700-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz.

Typical Performance (On Innogration fixture with d

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Optimized for Doherty.

Innogration

📥 Download Datasheet

Datasheet Details

Part number	ITDE10700D4
Manufacturer	Innogration
File Size	558.01 KB
Description	High Power RF LDMOS FET
Datasheet	ITDE10700D4 Datasheet
Additional preview pages of the ITDE10700D4 datasheet.

📁 Similar Datasheet

ITD03N40A - N-Channel MOSFET (IPS)
ITD03N80A - N-Channel MOSFET (IPS)
ITD03N90A - N-Channel MOSFET (IPS)
ITD04N60B - N-Channel MOSFET (IPS)
ITD04N60R - N-Channel MOSFET (IPS)
ITD04N65R - N-Channel MOSFET (IPS)
ITD05N50R - N-Channel MOSFET (IPS)
ITD06N60A - N-Channel MOSFET (IPS)
ITD06N65A - N-Channel MOSFET (IPS)
ITD06N70R - N-Channel MOSFET (IPS)

Other Datasheets by Innogration

ITDE10700D4E - High Power RF LDMOS FET
ITDE10600D4 - High Power RF LDMOS FET
ITDE10600D4E - High Power RF LDMOS FET
ITDE15551D4 - High Power RF LDMOS FET
ITDE15551D4E - High Power RF LDMOS FET

Full PDF Text Transcription

Click to expand full text

Innogration (Suzhou) Co., Ltd. 1GHz, 700W, 40V High Power RF LDMOS FETs Description The ITDE10700D4 is a 700-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz. It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation Typical Performance (On Innogration fixture with device soldered): VDD = 40 Volts, IDQ = 100 mA, Tcase=25 degree C Frequency Signal Gp (dB) P3dB(W) D@P3dB (%) 915MHz CW 15 700 68.4 915MHz 100us,10%, Pulsed 15.5 720 69 Recommended driver: MU1503V operated at 40V Document Number: ITDE10700D4 Preliminary Datasheet V1.

Published: Aug 5, 2018 |