ITDE10700D4 - High Power RF LDMOS FET

Innogration

General Description

The ITDE10700D4 is a 700-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz.

Typical Performance (On Innogration fixture with d

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Optimized for Doherty.

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ITDE10700D4 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITDE10700D4
Manufacturer	Innogration
File Size	558.01 KB
Description	High Power RF LDMOS FET
Datasheet	ITDE10700D4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Innogration (Suzhou) Co., Ltd. 1GHz, 700W, 40V High Power RF LDMOS FETs Description The ITDE10700D4 is a 700-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz. It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation Typical Performance (On Innogration fixture with device soldered): VDD = 40 Volts, IDQ = 100 mA, Tcase=25 degree C Frequency Signal Gp (dB) P3dB(W) D@P3dB (%) 915MHz CW 15 700 68.4 915MHz 100us,10%, Pulsed 15.5 720 69 Recommended driver: MU1503V operated at 40V Document Number: ITDE10700D4 Preliminary Datasheet V1.