Innogration ITSN20015P2
The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications, with frequencies up to 2 GHz.| Part No. | ITSN20015P2 |
|---|---|
| Datasheet | ITSN20015P2 Download |
| Manufacturer |  Innogration |
| Description | RF Power LDMOS FET |
| Buy | Stock & Price |
DESCRIPTION
Document Number: ITSN20015P2 Product Datasheet V2.0 ITSN20015P2●Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 300 mA，CW. Frequency P_1dB ηD P_3dB ηD Gp (dB) (MHz) (W) (%) (W) (%) 870 16.4 18 56 22 60
●Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 350 mA，CW. Frequency Gp (dB) P_1dB ηD P_3dB ηD (MHz) (W) (%) (W) (%) 2000 10.2 14.9 48.7 18.8 52.8 Figure 1. Pin Connection
FEATURES
● High Efficiency and Linear Gain Operations● Integrated ESD Protection
● Designed for broadband operation
● Excellent ruggedness
● Large Positive and Negative Gate/Source Voltage Range for Improved C
