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ITSN20015P2 - RF Power LDMOS FET

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Innogration

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ITSN20015P2 RF Power LDMOS FET by Innogration - Datasheet Preview — Datasheet preview – ITSN20015P2

Datasheet Details

Part number	ITSN20015P2
Manufacturer	Innogration
File Size	781.93 KB
Description	RF Power LDMOS FET
Datasheet	ITSN20015P2 Datasheet
Additional preview pages of the ITSN20015P2 datasheet.

Product details

Description

The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications, with frequencies up to 2 GHz.

Typical Perfor

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Designed for broadband operation.
Excellent ruggedness.
Large Positive and Negative Gate/Source Voltage Range for Improved C.

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Published: Aug 5, 2018 |