ITSN20015P2 Description
The ITSN20015P2 is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications, with frequencies up to 2 GHz. ITSN20015P2 Product Datasheet V2.0 ITSN20015P2 Typical Performance (On Innogration fixture with device soldered):.
ITSN20015P2 Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Designed for broadband operation
- Excellent ruggedness
- Large Positive and Negative Gate/Source Voltage Range for Improved C