ITSN20015P2 - RF Power LDMOS FET

Innogration

General Description

The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications, with frequencies up to 2 GHz.

Typical Perfor

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Designed for broadband operation.
Excellent ruggedness.
Large Positive and Negative Gate/Source Voltage Range for Improved C.

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ITSN20015P2 rf power ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITSN20015P2
Manufacturer	Innogration
File Size	781.93 KB
Description	RF Power LDMOS FET
Datasheet	ITSN20015P2 Datasheet

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Full PDF Text Transcription (Reference)

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Innogration (Suzhou) Co., Ltd. 15W, 12V RF Power LDMOS FETs Description The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications, with frequencies up to 2 GHz. Document Number: ITSN20015P2 Product Datasheet V2.0 ITSN20015P2 Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 300 mA，CW. Frequency P_1dB ηD P_3dB ηD Gp (dB) (MHz) (W) (%) (W) (%) 870 16.4 18 56 22 60 Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 350 mA，CW. Frequency Gp (dB) P_1dB ηD P_3dB ηD (MHz) (W) (%) (W) (%) 2000 10.2 14.9 48.7 18.8 52.8 Figure 1.