Datasheet Details
| Part number | ITSN20015P2 |
|---|---|
| Manufacturer | Innogration |
| File Size | 781.93 KB |
| Description | RF Power LDMOS FET |
| Datasheet | ITSN20015P2-Innogration.pdf |
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Overview: Innogration (Suzhou) Co., Ltd. 15W, 12V RF Power LDMOS FETs.
| Part number | ITSN20015P2 |
|---|---|
| Manufacturer | Innogration |
| File Size | 781.93 KB |
| Description | RF Power LDMOS FET |
| Datasheet | ITSN20015P2-Innogration.pdf |
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The ITSN20015P2 is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broadband mercial and industrial applications, with frequencies up to 2 GHz.
Document Number: ITSN20015P2 Product Datasheet V2.0 ITSN20015P2 Typical Performance (On Innogration fixture with device soldered): VDD = 12 Volts, IDQ = 300 mA，CW.
| Part Number | Description |
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