Datasheet4U Logo Datasheet4U.com

MK0540 - High Power RF LDMOS FET

General Description

The MK0540 is a 400-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 500MHz.

It can be used in Class AB/B and Class C for all typical modulation formats.

Typical

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Suitable.

📥 Download Datasheet

Datasheet Details

Part number MK0540
Manufacturer Innogration
File Size 481.93 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MK0540 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MK02FN128VFM10 Microcontroller NXP
MK02FN128VLF10 Microcontroller NXP
MK02FN128VLH10 Microcontroller NXP
MK02FN64VFM10 Microcontroller NXP
MK02FN64VLF10 Microcontroller NXP

Other Datasheets by Innogration

Part Number Description
MK0514 High Power RF LDMOS FET
MK0560VPX High Power RF LDMOS FET
MK0160VPX High Power RF LDMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MK0540 LDMOS TRANSISTOR 400W, 28V High Power RF LDMOS FETs Description The MK0540 is a 400-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 500MHz. It can be used in Class AB/B and Class C for all typical modulation formats. Document Number: MK0540 Product Datasheet V3.0 MK0540 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 2000 mA, CW. Freq(MHz) GP（dB） P-1dB (W) Eff(%) 500 17 380 60 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1.2 A, Two tone space 5MHz. Freq(MHz) GP（dB） POUT(W) Eff(%) IMD3(dBc) 225 21 79 29 -25 300 19.3 89 28 -35 400 16.9 87 31 -39 500 17.