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MK1040VP - High Power RF LDMOS FET

Datasheet Summary

Description

The MK1040VP is a 400-watt, high performance, internally matched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies 0.5 to 1GHz.

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Symbol VDSS VGS VDD Ts.

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Datasheet Details

Part number MK1040VP
Manufacturer Innogration
File Size 468.41 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MK1040VP Datasheet
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Full PDF Text Transcription

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MK1040VP LDMOS TRANSISTOR 400W, 50V High Power RF LDMOS FETs Description The MK1040VP is a 400-watt, high performance, internally matched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies 0.5 to 1GHz. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as UHF TV and Aerospace applications.  Typical performance(on 0.5-1GHz wideband test board with device soldered) Signal:pulse CW, pulse width:100us,duty cycle:10%,Vgs=2.99V,Vds=50V,Idq=120mA Freq(MHz) Pin(dBm) Psat(dBm) Psat(W) IDS(A) Gain(dB) η(%) 500 43.2 57.4 550 2.36 14.2 47% 600 41.2 57.8 603 1.89 16.6 64% 700 41.7 56.5 447 1.58 14.8 57% 800 40.7 56.1 407 1.89 15.4 43% 900 40.8 56.7 468 2.067 15.
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