MM1001 - High Power RF LDMOS FET

Innogration

General Description

The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies up to 2 GHz.

It can be used in Class AB/B and Class C for all typical modulation formats.

Typical Pe

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Excellent thermal stability, low HCI drift Suitable.

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MM1001 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	MM1001
Manufacturer	Innogration
File Size	755.05 KB
Description	High Power RF LDMOS FET
Datasheet	MM1001 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs Description The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies up to 2 GHz. It can be used in Class AB/B and Class C for all typical modulation formats. Document Number: MM1001 Product Datasheet V4.0 MM1001  Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA, CW.