• Part: MQ011K1VPX
  • Description: High Power RF LDMOS FET
  • Manufacturer: Innogration
  • Size: 706.60 KB
Download MQ011K1VPX Datasheet PDF
MQ011K1VPX page 2
Page 2
MQ011K1VPX page 3
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MQ011K1VPX Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
  • Excellent thermal stability, low HCI drift
  • pliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
  • 10 to +10
  • 65 to +150