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MQ011K1VPX - High Power RF LDMOS FET

Description

The MQ011K1VPX is a 1100-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.2 GHz.

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Excellent thermal stability, low HCI drift.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1/4 MQ011K1VPX LDMOS.

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Datasheet Details

Part number MQ011K1VPX
Manufacturer Innogration
File Size 706.60 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MQ011K1VPX Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MQ011K1VPX LDMOS TRANSISTOR Document Number: MQ011K1VPX Preliminary Datasheet V1.0 1100W, 50V High Power RF LDMOS FETs Description The MQ011K1VPX is a 1100-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.2 GHz. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as FM radio, VHF TV and Aerospace applications. MQ011K1VPX ď‚·Typical Performance (On Innogration narrow band fixture with device soldered): VDD = 50 Volts, IDQ = 1300 mA, CW. Freq(MHz) Pout(dBm) Gain(dB) Eff(%) 1.6 56 23.3 52 5 56 22.8 58 10 56 21.5 59 15 56 21.3 59 20 56 22.2 56 25 56 23.
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