MQ051K1VPX Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

MQ051K1VPX high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	MQ051K1VPX
Manufacturer	Innogration
File Size	606.39 KB
Description	High Power RF LDMOS FET
Download	MQ051K1VPX Download (PDF)

General Description

The MQ051K1VPX is a 1100-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.5 GHz.

It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as FM radio, VHF TV and Aerospace applications.

MQ051K1VPX Typical Performance (On Innogration narrow band fixture with device soldered): VDD = 52 Volts, IDQ = 100 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .

Overview

MQ051K1VPX LDMOS TRANSISTOR Document Number: MQ051K1VPX Preliminary Datasheet V1.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operatin.

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