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MQ051K1VPX - High Power RF LDMOS FET

Description

The MQ051K1VPX is a 1100-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.5 GHz.

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Excellent thermal stability, low HCI drift.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operatin.

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Datasheet Details

Part number MQ051K1VPX
Manufacturer Innogration
File Size 606.39 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MQ051K1VPX Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MQ051K1VPX LDMOS TRANSISTOR Document Number: MQ051K1VPX Preliminary Datasheet V1.0 1100W, 50V High Power RF LDMOS FETs Description The MQ051K1VPX is a 1100-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.5 GHz. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as FM radio, VHF TV and Aerospace applications. MQ051K1VPX Typical Performance (On Innogration narrow band fixture with device soldered): VDD = 52 Volts, IDQ = 100 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% . Frequency GP (dB) PSAT (W) D@PSAT (%) 325 MHz 20.5 1122 70.
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