MQ081K0VP Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

MQ081K0VP high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	MQ081K0VP
Manufacturer	Innogration
File Size	659.17 KB
Description	High Power RF LDMOS FET
Download	MQ081K0VP Download (PDF)

General Description

The MQ081K00VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band pulsed applications with frequencies 400MHz to 800MHz.

 Typical Performance (on innogration demo with device soldered): Frequency:440MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us duty cycle 10% 19.3 1060 68.5 Document Number: MQ081K0VP Preliminary Datasheet V1.0 MQ081K0VP

Overview

MQ081K0VP LDMOS TRANSISTOR 1000W, 50V High Power RF LDMOS FETs.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature R.

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