• Part: MQ081K0VP
  • Description: High Power RF LDMOS FET
  • Manufacturer: Innogration
  • Size: 659.17 KB
MQ081K0VP Datasheet (PDF) Download
Innogration
MQ081K0VP

Description

The MQ081K00VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band pulsed applications with frequencies 400MHz to 800MHz.

Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
  • Excellent thermal stability, low HCI drift
  • pliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
  • Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature R