MQ081K0VP Overview
The MQ081K00VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band pulsed applications with frequencies 400MHz to 800MHz. Typical Performance (on innogration demo with device soldered): Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us duty cycle 10% 19.3 1060 68.5 Document Number:.
MQ081K0VP Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- Excellent thermal stability, low HCI drift
- pliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
MQ081K0VP Applications
- Typical Performance (on innogration demo with device soldered)