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MQ1080VP - High Power RF LDMOS FET

General Description

The MQ1080VP is a 800-watt, high performance, internally matched LDMOS FET, designed for multiple applications with frequencies 0.5 to 1GHz.

It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as UHF TV and Aerospace applications.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • La.

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Datasheet Details

Part number MQ1080VP
Manufacturer Innogration
File Size 379.31 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MQ1080VP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MQ1080VP LDMOS TRANSISTOR 800W, 50V High Power RF LDMOS FETs Description The MQ1080VP is a 800-watt, high performance, internally matched LDMOS FET, designed for multiple applications with frequencies 0.5 to 1GHz. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as UHF TV and Aerospace applications. Document Number: MQ1080VP Preliminary Datasheet V1.