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MQ1270VP - High Power RF LDMOS FET

General Description

The MQ1270VP is a 700-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 960 to 1215MHz.

It is featured for high power and high ruggedness.

Typical long pulse Performance (on

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Excellent thermal stability, low HCI drift.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Document Number: MQ1270VP Preliminary Datasheet V1.0 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 115 Vdc Gate--.

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Datasheet Details

Part number MQ1270VP
Manufacturer Innogration
File Size 508.70 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MQ1270VP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MQ1270VP LDMOS TRANSISTOR Document Number: MQ1270VP Preliminary Datasheet V1.0 700W, 50V High Power RF LDMOS FETs Description The MQ1270VP is a 700-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 960 to 1215MHz. It is featured for high power and high ruggedness. It is recommended to use this device under pulse condition only  Typical long pulse Performance (on innogration wide band test fixture with device soldered): Pulse width:100uS, duty cycle: 10%, Vds = 50 V, Idq = 100 mA, TA = 25 C Freq(MHz) Pin(dBm) Pout(dBm) Pout(W) IDS(A) Gain(dB) 960 46.5 59 800 3.76 12.5 990 46.5 59.7 933 3.96 13.2 1010 46.5 60.2 1047 4.37 13.7 1040 46.5 58.9 776 3.81 12.4 1070 46.5 59.6 912 4.48 13.1 1100 46.