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MQ1470VP - High Power RF LDMOS FET

General Description

The MQ1470VP is a 750-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 1.2 to 1.4GHz It is featured for high power and high ruggedness.

Typical Pulse Performance (on innogra

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Excellent thermal stability, low HCI drift.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operatin.

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Datasheet Details

Part number MQ1470VP
Manufacturer Innogration
File Size 587.85 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MQ1470VP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MQ1470VP LDMOS TRANSISTOR Document Number: MQ1470VP Preliminary Datasheet V1.0 750W, 50V High Power RF LDMOS FETs Description The MQ1470VP is a 750-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 1.2 to 1.4GHz It is featured for high power and high ruggedness.