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MQ1470VP - High Power RF LDMOS FET

Datasheet Summary

Description

The MQ1470VP is a 750-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 1.2 to 1.4GHz It is featured for high power and high ruggedness.

Typical Pulse Performance (on innogra

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Excellent thermal stability, low HCI drift.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operatin.

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Datasheet preview – MQ1470VP

Datasheet Details

Part number MQ1470VP
Manufacturer Innogration
File Size 587.85 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MQ1470VP Datasheet
Additional preview pages of the MQ1470VP datasheet.

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Full PDF Text Transcription

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MQ1470VP LDMOS TRANSISTOR Document Number: MQ1470VP Preliminary Datasheet V1.0 750W, 50V High Power RF LDMOS FETs Description The MQ1470VP is a 750-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 1.2 to 1.4GHz It is featured for high power and high ruggedness.
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