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MU1014V - High Power RF LDMOS FET

General Description

The MU1014V is a 140-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 1GHz.

Typical Performance (On Innogration narrow band fixture with device soldered): V

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Suitable.

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Datasheet Details

Part number MU1014V
Manufacturer Innogration
File Size 316.90 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MU1014V Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MU1014V LDMOS TRANSISTOR 140W, 50V High Power RF LDMOS FETs Description The MU1014V is a 140-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 1GHz. Document Number: MU1014V Preliminary Datasheet V1.0 MU1014V Typical Performance (On Innogration narrow band fixture with device soldered): VDD = 50 Volts, IDQ = 100 mA, CW. Frequency Gp (dB) Pout (W) D@Pout (%) 915 MHz 20.