• Part: MU1014V
  • Description: High Power RF LDMOS FET
  • Manufacturer: Innogration
  • Size: 316.90 KB
Download MU1014V Datasheet PDF
Innogration
MU1014V
MU1014V is High Power RF LDMOS FET manufactured by Innogration.
MU1014V LDMOS TRANSISTOR 140W, 50V High Power RF LDMOS FETs Description The MU1014V is a 140-watt, highly rugged, unmatched LDMOS FET, designed for wide-band mercial and industrial applications at frequencies HF to 1GHz. Document Number: MU1014V Preliminary Datasheet V1.0 - Typical Performance (On Innogration narrow band fixture with device soldered): VDD = 50 Volts, IDQ = 100 m A, CW. Frequency Gp (d B) Pout (W) D@Pout (%) 915 MHz Features - High Efficiency and Linear Gain Operations - Integrated ESD Protection - Excellent thermal stability, low HCI drift - Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation - Pb-free, Ro HS-pliant Suitable Applications - 2-30MHz (HF or Short wave munication) - 30-88MHz (Ground munication) - 54-88MHz (TV VHF I) - 88-108MHz (FM) - 118 -140MHz (Avionics) - 136-174MHz (mercial ground munication) - 160-230MHz (TV VHF III) - 30-512MHz...