MX0160VPX Datasheet High Power Rf Ldmos Fet

Manufacturer: Innogration

Overview: MX0160VPX LDMOS TRANSISTOR Document Number: MX0160VPX Preliminary Datasheet V1.

Datasheet Details

Part number	MX0160VPX
Manufacturer	Innogration
File Size	544.56 KB
Description	High Power RF LDMOS FET
Datasheet	MX0160VPX-Innogration.pdf

General Description

The MX0160VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.2 GHz.

It is the thermally enhancement of its peer MK0160VPX(S) MX0160VPX  Typical performance(on 1.6-30MHz wideband test board with device soldered) VDS=50V,IDQ=1500mA, Signal：2-Tone space 650Hz CW, Freq(MHz) PAVG(W) Gain(dB) η(%) IMD3(dBc) 1.6 150 24.2 38 -35 5 150 24.4 37 -39 10 150 25.0 38 -44 15 150 25.2 38 -44 20 150 24.8 38 -44 25 150 24.1 37 -38 30 150 23.8 36 -32

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Suitable.

MX0160VPX Distributor

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