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MX0160VPX - High Power RF LDMOS FET

General Description

The MX0160VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.2 GHz.

Typical performance(on 1.6-30MHz wideband test board wi

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Suitable.

📥 Download Datasheet

Datasheet Details

Part number MX0160VPX
Manufacturer Innogration
File Size 544.56 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MX0160VPX Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX0160VPX LDMOS TRANSISTOR Document Number: MX0160VPX Preliminary Datasheet V1.0 550W, 50V High Power RF LDMOS FETs Description The MX0160VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.2 GHz. It is the thermally enhancement of its peer MK0160VPX(S) MX0160VPX  Typical performance(on 1.6-30MHz wideband test board with device soldered) VDS=50V,IDQ=1500mA, Signal:2-Tone space 650Hz CW, Freq(MHz) PAVG(W) Gain(dB) η(%) IMD3(dBc) 1.6 150 24.2 38 -35 5 150 24.4 37 -39 10 150 25.0 38 -44 15 150 25.2 38 -44 20 150 24.8 38 -44 25 150 24.1 37 -38 30 150 23.