Datasheet4U Logo Datasheet4U.com

MX1506VP - High Power RF LDMOS FET

Description

The MX1506VP is a 60-watt, highly rugged, thermally enhanced, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 1.5 GHz.

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift Suitable.

📥 Download Datasheet

Datasheet Details

Part number MX1506VP
Manufacturer Innogration
File Size 328.09 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MX1506VP Datasheet

Full PDF Text Transcription

Click to expand full text
MX1506VP LDMOS TRANSISTOR 60W, 50V High Power RF LDMOS FETs Description The MX1506VP is a 60-watt, highly rugged, thermally enhanced, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 1.5 GHz. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as FM radio, VHF TV and Aerospace applications. Typical Performance (On Innogration narrow band fixture with device soldered): VDD = 50 Volts, IDQ = 200 mA, CW. Frequency Gp (dB) Pout (W) D@Pout (%) 915 MHz 23 60 60 Document Number: MX1506VP Preliminary Datasheet V1.
Published: |