INN150FQ032A - 150V Enhancement-mode GaN Power Transistor

General Description

package size.

Key Features

 GaN-on-Silicon E-mode HEMT technology  Industry.

INN150FQ032A 150v enhancement-mode gan power transistor by Innoscience - Datasheet Preview

Datasheet Details

Part number	INN150FQ032A
Manufacturer	Innoscience
File Size	1.12 MB
Description	150V Enhancement-mode GaN Power Transistor
Datasheet	INN150FQ032A Datasheet

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Full PDF Text Transcription (Reference)

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INN150FQ032A 150V Enhancement-mode GaN Power Transistor INN150FQ032A 1. General description GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size. 13 19 2. Features  GaN-on-Silicon E-mode HEMT technology  Industry Application  Very low gate charge  Ultra-low on resistance  Very small footprint 12 11 10 9 8 7 6 31 20 21 22 23 24 25 3. Applications  High frequency DC-DC converter  Solar Systems optimizers and microinverters  PD Charger and PSU Synchronous Rectification  Telecom Power Supply  Motor driver 4. Key performance parameters D G S Table 1 Key performance parameters at Tj = 25 °C Parameter Value VDS,max 150 RDS(on),max @ VGS = 5 V 3.