INN150FQ032A Description
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size.
| Part number | INN150FQ032A |
|---|---|
| Download | INN150FQ032A Datasheet (PDF) |
| File Size | 1.12 MB |
| Manufacturer | Innoscience |
| Description | 150V Enhancement-mode GaN Power Transistor |
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| Part Number | Description |
|---|---|
| INN650D150A | Power Transistor |
| INN650DA260A | 650V GaN Enhancement-mode Power Transistor |
| INN700D190B | 700V GaN Enhancement-mode Power Transistor |
| INN700DC240A | 700V GaN Enhancement-mode Power Transistor |
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size.