Datasheet Summary
150V Enhancement-mode GaN Power Transistor
1. General description
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size.
2. Features
GaN-on-Silicon E-mode HEMT technology Industry Application Very low gate charge Ultra-low on resistance Very small footprint
12 11 10 9 8 7
21 22 23 24 25
3. Applications
High frequency DC-DC converter Solar Systems optimizers and microinverters PD Charger and PSU Synchronous Rectification Tele Power Supply Motor driver
4. Key performance parameters
Table 1
Key performance parameters at Tj = 25 °C
Parameter
Value...