INN150FQ032A Datasheet PDF

FEATURES

 GaN-on-Silicon E-mode HEMT technology  Industry Application  Very low gate charge  Ultra-low on resistance  Very small footprint 12 11 10 9 8 7 6 31 20 21 22 23 24 25 3.

APPLICATIONS

 High frequency DC-DC converter  Solar Systems optimizers and microinverters  PD Charger and PSU Synchronous Rectification  Telecom Power Supply  Motor driver 4. Key performance parameters D G S Table 1 Key performance parameters at Tj = 25 °C Parameter Value VDS,max 150 RDS(on),max @ VGS = 5 V 3.9 QG,typ @ VDS = 75V 20 IDS,Pulse 260 QOSS @ VDS = 75V 130 Unit V mΩ nC A nC 5. Pin information Table 2 Pin information Pin Pin description 1,2,25 Gate 3-7,9,11,21,23 Source 8,10,12-20,22,24 Drain Pin function Driver Gate Source Power Drain Table 3 Ordering information Type/Ordering Code Package INN150FQ032A FCQFN 4X6 Product Code M04 Page 1 POWER THE FUTURE Datasheet Rev. 1.0 2023/07/17 INN150FQ032A 150V Enhancement-mode GaN Power Transistor Table of contents 1. General description .........................................................................................