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INN150FQ032A Datasheet 150v Enhancement-mode Gan Power Transistor

Manufacturer: Innoscience

Overview: INN150FQ032A 150V Enhancement-mode GaN Power Transistor INN150FQ032A 1.

Datasheet Details

Part number INN150FQ032A
Manufacturer Innoscience
File Size 1.12 MB
Description 150V Enhancement-mode GaN Power Transistor
Datasheet INN150FQ032A-Innoscience.pdf

General Description

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size.

13 19 2.

Key Features

  •  GaN-on-Silicon E-mode HEMT technology  Industry.

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