FEATURES
Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge Low gate charge, low output charge Qualified for industrial applications according to JEDEC Standards ESD safeguard RoHS, Pb-free, REACH-compliant 3. APPLICATIONS
AC-DC converters DC-DC converters Totem pole PFC Fast battery charging High density power conversion High efficiency power conversion D D D D D D D D 1 S S SK G 8 4. Key performance parameters Table 1 Key performance parameters at Tj = 25 °C Parameter Value VDS,max 650 RDS(on),max @ VGS = 6 V 150 QG,ty p @ VDS = 400 V 3 ID,pulse 32 QOSS @ VDS = 400 V 28 Qrr @ VDS = 400 V 0 Unit V mΩ nC A nC nC 5. Pin information Table 2 Gate 8 Pin information Drain 1,2,3,4 Kelvin Source 7 Source 5,6 Table 3 Ordering information Type/Ordering Code Package INN650D150A DFN 8X8 Marking (Product Code) INN65D150A Page 1 POWER THE FUTURE Datasheet Rev. 1.0 2021/04/26 INN650D150A 650V GaN Enhancement-mode Power Transistor Table of contents 1.
