INN650D150A - Power Transistor

General Description

Key Features

 Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for industrial.

INN650D150A power transistor by Innoscience - Datasheet Preview

Datasheet Details

Part number	INN650D150A
Manufacturer	Innoscience
File Size	828.14 KB
Description	Power Transistor
Datasheet	INN650D150A Datasheet

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Full PDF Text Transcription (Reference)

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INN650D150A 650V GaN Enhancement-mode Power Transistor INN650D150A 1. General description 650V GaN-on-silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size 2. Features  Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for industrial applications according to JEDEC Standards  ESD safeguard  RoHS, Pb-free, REACH-compliant 3. Applications  AC-DC converters  DC-DC converters  Totem pole PFC  Fast battery charging  High density power conversion  High efficiency power conversion D D D D D D D D 1 S S SK G 8 4.