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INN700D190B - 700V GaN Enhancement-mode Power Transistor

General Description

2.

Key Features

  •  Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for industrial.

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Datasheet Details

Part number INN700D190B
Manufacturer Innoscience
File Size 2.65 MB
Description 700V GaN Enhancement-mode Power Transistor
Datasheet download datasheet INN700D190B Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INN700D190B 700V GaN Enhancement-mode Power Transistor INN700D190B 1. General description 700V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size 2. Features  Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for industrial applications according to JEDEC Standards  ESD safeguard  RoHS, Pb-free, REACH-compliant 3. Applications  DCM/BCM PFC  AHB/LLC/QR Flyback/ACF DCDC converter  LED driver  Fast battery charger  Notebook/AIO adaptor  Desktop PC/ATX/TV/power tool power supply 4.