Datasheet4U.com

INN700D190B Datasheet PDF

Innoscience INN700D190B

The minimum VGS is clamped by ESD protection circuit, as shown in Figure 10 Page 3 POWER THE FUTURE Datasheet Rev.
Part No. INN700D190B
Datasheet INN700D190B Download
Manufacturer Innoscience
Description 700V GaN Enhancement-mode Power Transistor
Buy Stock & Price
INN700D190B datasheet page 1 preview

FEATURES

 Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for industrial applications according to JEDEC Standards  ESD safeguard  RoHS, Pb-free, REACH-compliant 3.

APPLICATIONS

 DCM/BCM PFC  AHB/LLC/QR Flyback/ACF DCDC converter  LED driver  Fast battery charger  Notebook/AIO adaptor  Desktop PC/ATX/TV/power tool power supply 4. Key performance parameters Table 1 Key performance parameters at Tj = 25 °C Parameter Value VDS,max 700 RDS(on),max @ VGS = 6 V 190 QG,typ @ VDS = 400 V 2.8 ID,pulse 20.5 QOSS @ VDS = 400 V 24.5 Qrr @ VDS = 400 V 0 Unit V mΩ nC A nC nC D D D D D D D D 1 9 S S SK G 8 D G SK S 5. Pin information Table 2 Pin information Gate Drain 8 1,2,3,4 Kelvin Source 7 Source 5,6,9 Table 3 Ordering information Type/Ordering Code Package INN700D190B DFN 8X8 Product Code 70D190B Page 1 POWER THE FUTURE Datasheet Rev. 1.0 2023/04/21 INN700D190B 700V GaN Enhancement-mode Power Transistor Table of contents 1.
INN700D190B page 2 preview INN700D190B page 3 preview