IDT74FCT163501 Datasheet PDF (3.3V CMOS 18-BIT REGISTERED TRANSCEIVER) | Download Integrated Device Technology IDT74FCT163501

IDT74FCT163501 - 3.3V CMOS 18-BIT REGISTERED TRANSCEIVER

This page provides the datasheet information for the IDT74FCT163501, a member of the IDT-74FCT 3.3V CMOS 18-BIT REGISTERED TRANSCEIVER family.

Description

The FCT163501/A/C 18-bit registered transceivers are built using advanced dual metal CMOS technology.

high-speed, low-power 18-bit registered bus transceivers combine D-type latches and D-type flip-flops to allow data flow in transparent, latched and clocked modes.

Features

0.5 MICRON CMOS Technology.
Typical tSK(o) (Output Skew) < 250ps.
ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0).
Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP and 15.7 mil pitch TVSOP.
Extended commercial range of -40°C to +85°C.
VCC = 3.3V ±0.3V, Normal Range or VCC = 2.7 to 3.6V, Extended Range.
CMOS power levels (0.4µW typ. static).
Rail-to-Rail output swing for incre.

Datasheet Details

Part number	IDT74FCT163501
Manufacturer	Integrated Device Technology
File Size	111.59 KB
Description	3.3V CMOS 18-BIT REGISTERED TRANSCEIVER
Datasheet	IDT74FCT163501 Datasheet
Additional preview pages of the IDT74FCT163501 datasheet.

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Full PDF Text Transcription

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3.3V CMOS 18-BIT REGISTERED TRANSCEIVER Integrated Device Technology, Inc. IDT74FCT163501/A/C FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP and 15.7 mil pitch TVSOP • Extended commercial range of -40°C to +85°C • VCC = 3.3V ±0.3V, Normal Range or VCC = 2.7 to 3.6V, Extended Range • CMOS power levels (0.4µW typ. static) • Rail-to-Rail output swing for increased noise margin • Low Ground Bounce (0.3V typ.) • Inputs (except I/O) can be driven by 3.3V or 5V components DESCRIPTION: The FCT163501/A/C 18-bit registered transceivers are built using advanced dual metal CMOS technology.

Published: Apr 4, 2005 |